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5PMNFCC0 : Device and circuit reliability - WPMNDFC9

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  • Number of hours

    • Lectures : 6.0
    • Tutorials : 6.0
    • Laboratory works : 0
    • Projects : 0
    • Internship : 0
    ECTS : 1.0

Goals

In the microelectronics reliability context, understand the physics and the laws ruling the main failure mechanisms encountered in integrated circuit reliability, be able to perform a reliability analysis up to lifetime extrapolation based on experimental data

Contact Emmanuel VINCENT

Content

  • Reliability context in semiconductor industry
  • Reliability basics remindser : reliability analysis basic concepts and tools for microelectronics reliability
  • Focus on main failure mechanisms in modern integrated circuits : phenomenological description and associated physics, methodologies and test structures, process reliability strategy
  • Addressed failure mechanisms : Gate Oxide Integrity, Mobile Ion Contamination, Hot-Carrier Injection, Bias Temperature Instability, Electromigration, Stress Migration
  • Application exercises


Prerequisites
  • Semiconductor physics
  • Statistics

Tests

EVALUATION : Written exam 2h



Additional Information

Curriculum->Master->Semester 9
Curriculum->Master PhSem->Semester 9

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Date of update October 15, 2019

Grenoble INP Institut d'ingénierie Univ. Grenoble Alpes