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School of engineering in Physics, Applied Physics, Electronics & Materials
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Our engineering & Master degrees
Our engineering & Master degrees

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Labs: Electrical characterization of MOS devices - 5PMNTPE0

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  • Number of hours

    • Lectures : 0
    • Tutorials : 0
    • Laboratory works : 8.0
    • Projects : 0
    • Internship : 0
    • Written tests : 0
    ECTS : 0.5

Goals

Experimentally evidence the characteristics of parasitic effets present in advanced MOSFET

Contact Maryline BAWEDIN

Content

  • Characterics of short channel effets using I-V measurement
  • Extraction of mobility


Prerequisites

Electrical characterisation of MOSFET

Tests

Lab Report



100% rapport

Additional Information

Curriculum->Double-Diploma IPhy-PhSem->Semester 9
Curriculum->IPhy->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9

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Grenoble INP Institut d'ingénierie Univ. Grenoble Alpes