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Labworks technology in clean room characterisation - 4PMEM1D9

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  • Number of hours

    • Lectures : 8.0
    • Tutorials : 0
    • Laboratory works : 12.0
    • Projects : 0
    • Internship : 0
    ECTS : 2.0

Goals

The lecture will introduce the main technological steps and their key parameters, in order to prepare the students for the clean-room labwork. The labwork flow and steps will be benchmarked with respect to actual solutions used in the microelectronics industry.
The aim the clean room labworks is to familiarize students with the technological operations for the elaboration of integrated circuits (NMOS process).
Electrical characterization sessions will follow the realization in order to test the electrical behavior of the fabricated devices.

Contact Estelle APPERT, Irina IONICA

Content

Lecture: principles, mechanisms, key parameters for the main fabrication steps: oxidation, deposition, ionic implantation, lithography, etching etc.
Technology lab sessions: Thermal processes; deposition processes (CVD, sputtering, heat vapor deposition...); doping (ion implantation, diffusion); lithography ; wet and reactive ion etching.
Electrical characterization sessions: C/V and I/V measurements, MOS capacitance behavior, PN junctions, integrated resistors, MOS transistors.



Prerequisites

Basics of semiconductor device physics.

Tests

Evaluation for the lecture part: one hour exam.
A report for the clean room sessions as well as a report for the electrical characterization sessions, to be held one week after the last session of each part.
The behavior during the sessions will be taken into account.



N1=0.5(2/3*SB+1/3*CE)+0.5 exam
N2=N1

CE: note pour la partie caractérisation
SB: note pour la partie en salle blanche
Final mark: 0.5(1/3*CE + 2/3*SB)+0.5 exam

Additional Information

Curriculum->SEI->Semester 8

Bibliography

Handouts

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Université Grenoble Alpes