Physics of semiconductors & semiconductors devices - 4PMBPSS4
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail
Number of hours
- Lectures : 20.0
- Tutorials : 12.0
ECTS : 3.0
Goals
To introduce the physical phenomena which appear in semiconductor materials and are used in microelectronic sensors or devices.
To understand the physics and operation of basic semiconductor devices: PN junctions, metal-oxide semiconductor (MOS) capacitors, MOS transistors.
Contact Laurent MONTES
Content Physical and electrical conducting properties of semiconductors :
• Semiconductor elementary properties at equilibrium (structures, energy bands, electron and hole, doping)
•Poisson equation and consequences (Space Charge Region, potential barrier or well)
•Weak perturbations of equilibrium : charge transport (conduction, carrier mobility, diffusion, Hall effect)
•Strong perturbations of equilibrium (carrier generation and recombination)
Principle of operation and electrical characteristics of basic semiconductor devices:
•PN junctions
•MOS capacitors
•MOS transistors
PrerequisitesBasics of :
• Quantum Physics
• Statistical Physics
• Solid-State Physics (electronic properties, energy bands, charge carriers)
Tests Semester 7 - The exam is given in english only 
FORBIDDEN : All documents
AUTHORIZED : Calculator and one recipe report
Examen Final 100%
Additional Information Semester 7 - This course is given in english only 
Bibliography A. Vapaille et R. Castagné : Dispositifs et circuits intégrés (Dunod, 1987)
H. Mathieu : Physique des semiconducteurs et des composants électroniques (Dunod, 2004)
G. Streetman and S. Banerjee : Solid-state Electronic Devices (6th Ed., Prentice Hall,2005)
S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail