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School of engineering in Physics, Applied Physics, Electronics & Materials
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Our engineering & Master degrees
Our engineering & Master degrees

> Studies

Physics of technological processes - WPMSPPT7

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  • Number of hours

    • Lectures : 10.0
    • Tutorials : 10.0
    • Laboratory works : 0
    • Projects : 0
    • Internship : 0
    ECTS : 3.0

Goals

The objective of the course is to modelize the physical phenomena which intervene in the current electronic device technology. This include microelectronics, but also photovoltaic cells and LED for solid state light sources. Main processes include solid state diffusion, ion implantation, defects formation and recovery, interdiffusion for thin film formation (SiO2, silicides, carbides…). The phenomena are illustrated in the case of silicon, mainly, and of “alternative” semiconductors (SiC, GaN, diamond,…).

Contact Etienne GHEERAERT

Content

  • Introduction: Principal technological steps of the current circuits. Evolutions.
  • Atomic diffusion in the semiconductors : historical review, self-diffusion, dopant diffusion.
  • Ion Implantation : historical review, LSS model, application to doping and SmartCut, Shallow jonctions, annealing, TED.
  • Formation of layers by chemical reaction. Application to thermal oxidation of silicon.


Prerequisites

Crystallography : Crystal structure
Thermodynamics : Free energy, Gibbs energy
Semi-conductor Physics : Band diagram, doping, energy levels

Tests



N1=10%CC+90%EXAM1, N2=EXAM2

Additional Information

Curriculum->Double-Diploma IPhy-PhSem->Semester 9
Curriculum->Master->Semester 9
Curriculum->Master PhSem->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9

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Date of update December 14, 2016

Grenoble INP Institut d'ingénierie Univ. Grenoble Alpes