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School of engineering in Physics, Applied Physics, Electronics & Materials
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Our engineering & Master degrees

Physics of semiconductors & semiconductors devices - 4PMBPSS4

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  • Number of hours

    • Lectures : 20.0
    • Tutorials : 12.0
    ECTS : 3.0

Goals

To introduce the physical phenomena which appear in semiconductor materials and are used in microelectronic sensors or devices.
To understand the physics and operation of basic semiconductor devices: PN junctions, metal-oxide semiconductor (MOS) capacitors, MOS transistors.

Contact Laurent MONTES

Content

Physical and electrical conducting properties of semiconductors :
• Semiconductor elementary properties at equilibrium (structures, energy bands, electron and hole, doping)
•Poisson equation and consequences (Space Charge Region, potential barrier or well)
•Weak perturbations of equilibrium : charge transport (conduction, carrier mobility, diffusion, Hall effect)
•Strong perturbations of equilibrium (carrier generation and recombination)
Principle of operation and electrical characteristics of basic semiconductor devices:
•PN junctions
•MOS capacitors
•MOS transistors



Prerequisites

Basics of :
• Quantum Physics
• Statistical Physics
• Solid-State Physics (electronic properties, energy bands, charge carriers)

Tests

The exam is given in english only 

Final exam (2h)



Examen Final 100%

Additional Information

This course is given in english only EN

Curriculum->BIOMED->Semester 3

Bibliography

A. Vapaille et R. Castagné : Dispositifs et circuits intégrés (Dunod, 1987)
H. Mathieu : Physique des semiconducteurs et des composants électroniques (Dunod, 2004)
G. Streetman and S. Banerjee : Solid-state Electronic Devices (6th Ed., Prentice Hall,2005)
S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).

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Written by Alexis Sableaux

Communauté Université Grenoble Alpes
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