Phelma Formation 2022

Electrical modelling for active integrated devices - 3PMRMEC4

  • Number of hours

    • Lectures 14.0
    • Projects 0
    • Tutorials 18.0
    • Internship 0
    • Laboratory works 0

    ECTS

    ECTS 1.0

Goal(s)

Knowing the physical phenomena which appear in semiconductor materials and which are used for the comprehension of sensors or croelectronics components operation.
Understand the basic models of the main icroelectronics components (MOSFET transistor, MOS capacitor, PN junction ...). Understand the specific effects of miniaturization

Contact Panagiota MORFOULI

Content(s)

• Elementary properties of semiconductors at equilibrium (structures, energy bands, electron and hole concentration, doping...)
• Poisson equation
• MIS structures (ideal or real), MOS operation and parameters extraction; CCD
• Field effect transistors: MOSFET, operation, models and parameter extraction.
• Introduction to JFETand MESFET transistors
• p-n junction; ideal and real models;



Prerequisites

Semiconductor physics lectures

Test

Written exam / 90%
Continuous Control / 10%



Examen Ecrit/ 80%
Contrôle Continu/ 20%

Additional Information

Course list
Curriculum->Alternance MT->Semester 5

Bibliography

• Vapaille et R. Castagné : Dispositifs et circuits intégrés (Dunod, 1987)
• H. Mathieu : Physique des semiconducteurs et des composants électroniques (Dunod, 2004)
• S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).