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From micro to nanoelectronics - 4PMTMNE2

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  • Number of hours

    • Lectures : 12.0
    • Tutorials : 4.0
    ECTS : 1.5

Goals

The aim of this lecture is to presents the physics and the modelling of the MOSFET

Contact Quentin RAFHAY

Content

  • Demonstration of the current-voltage equation of the MOSFET
  • Carrier transport in long and short channel
  • Electrostatic effects in short channel
  • Quantum effets


Prerequisites

Solid state physics
Semiconductor Physics
Semiconductor device physics

Tests

The exam is given in english only 

Exam, 2h



Additional Information

This course is given in english only EN

Curriculum->NANOTECH->Semester 4

Bibliography

Physique des semiconducteurs et des composants électronique - Henry Mathieu - Dunod
Fundamentals of carrier transport - Mark Lundstrom - Cambridge university press
Semiconductor devices physics and technology - Sze

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Université Grenoble Alpes