Phelma Formation 2022

Integrated photonics simulation project - 5PMNTPE0

  • Number of hours

    • Lectures 0
    • Projects 0
    • Tutorials 0
    • Internship 0
    • Laboratory works 8.0
    • Written tests 0

    ECTS

    ECTS 0.5

Goal(s)

Experimentally evidence the characteristics of parasitic effects present in submicronic/nanometric MOSFET

Contact Maryline BAWEDIN

Content(s)

  • Introduction to TCAD numerical simulations of state of the art MOSFETs
  • Characteristics of short channel effects using I-V measurement
  • Extraction of typical physics parameters (threshold voltage, mobility etc)
  • Settle of links between the 2D/3D simulations and electrical IV behavior


Prerequisites

Electrical characterisation of MOSFET

Test

The students can chose: Conventional lab report or oral evaluation at the end of the practice



100% rapport

Additional Information

Curriculum->Engineering degree->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9