Number of hours
- Lectures 12.0
- Projects 0
- Tutorials 14.0
- Internship 0
- Laboratory works 0
ECTS
ECTS 2.0
Content(s)
Semiconductor material in equilibrium conditions, doping, resistivity versus temperature
Transport in Semiconductor, Boltzmann transport equation, Drift and Diffusion model
Recombination and Generation Process in Semiconductor
P N Junction, Shockley model
Exercices :
Schockley diagram
Hall Effect in Semiconduction
Shockley Read Hall trap assisted recombinaison model
Photoconduction in semiconductor material
Transport in the diffusion layer of a PN junction
Prerequisites
Prerequisities : Basics of band structure (electrons in a crystal)
Test
2 hours written exam
Examen Ecrit : 100%
Additional Information
Course list
Curriculum->Engineering degree->Semester 7
Bibliography
- "Physique des solides", Neil - W Ashcroft, N-David Mermin
- "Physics of Semiconductor Devices" by S.M. Sze