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School of engineering in Physics, Applied Physics, Electronics & Materials

Our engineering & Master degrees
Our engineering & Master degrees

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Physics & elaboration of nanostructures UGA - WPMNPEN7

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  • Number of hours

    • Lectures : 11.25
    • Tutorials : 11.25
    ECTS : 3.0


The goal of this course is to introduce the crystal growth techniques and the physics of nanostructures. Both aspects will be mostly illustrated
by examples taken in field of semiconductor nanostructures. The first part will present the usual semiconductors and their alloys used as
elementary building blocks of semiconductor nanostructures. The second part will be devoted on the epitaxial growth techniques. After an
introduction of the basics of the epitaxial growth modes, the elastic strain will be discussed in the case of planar heteroepitaxy leading to
elastic or plastic deformations. A description of the common epitaxial growth techniques will be presented. The third part will address
specifically the case of nanostructures in term of growth, electronic and optical properties. The different ways to growth nanostructure from
quantum wells to quantum dots will be presented, as well as the specific case of nanowire growth and selective growth. Different structural
characterization techniques (transmission electron microscopy, X ray diffraction, in situ analyses, atomic probe tomography) will be introduced
in this part. Concerning electronic properties, the fundamental aspects will be discussed using the envelop function formalism: calculation of
2D, 1D, 0D quantum confinement, light-matter interactions, confined excitons, selection rules, interband and inter-subband optical transitions).

Contact Lionel BASTARD, Jean-Christophe TOUSSAINT


Part I: Introduction to semiconductor nanostructures
Chap. 1 : Usual semiconductors used as elementary building blocks for nanostructures
Chap. 2 : Physical properties of electron and holes closed to band extrema
Part II : Epitaxial growth
Chap. 3 : Basics and growth modes.
Chap. 4 : Heteroepitaxy and strain in epitaxial nanostructure
Chap. 5 : Growth techniques
Part. III : Growth and physical properties of semiconductor nanostructures
Chap. 6 : Growth and structural characterization of nanostructures
Chap. 7 : Electronic properties
Chap 8 : Optical properties



Semester 9 - The exam is given in english only 

Additional Information

Semester 9 - This course is given in english only EN

Curriculum->PNS->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9

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Date of update December 14, 2016

Université Grenoble Alpes