Phelma Formation 2022

Crystal growth and defects

  • Number of hours

    • Lectures 10.0
    • Tutorials 6.0

    ECTS

    ECTS 2.5

Goal(s)

Knowledge of :

  • The various types of single crystals used in advanced technologies
  • All the industrial and laboratory crystal growth processes
  • Defect generation due to the crystal growth process

TO SEE FICHE 2A-SIM 4PMMPHO9


Contact Thierry DUFFAR

Content(s)

  • Bulk crystal growth techniques: Czochralski, floating zone, Verneuil, shaping, Bridgman, PVT …
  • Growth kinetics : interface morphology, rough and facetted, classical kinetic laws for rough, facetted and unsaturable interfaces
  • Chemical Segregation : Sheil-Gulliver, diffusive case, convecto-diffusive, radial segregation
  • Crystal defects :
    • Point defects and precipitation
    • Dislocations in semiconductors
    • Dislocation generation and multiplication during crystal growth
    • Twinning
    • Grain and grain boundary nucleation and growth


Prerequisites

Teaching methods : The fundamental concepts are presented in theoretical classes, problems are solved in TP classes, starting with simple examples and gradually introducing more complex examples based on real cases.
Language : Classes and assessment in English

Test

The exam is given in english only 

Final Exam (2h)



Additional Information

This course is given in english only EN

Course list
Curriculum->Internationals Cursus->Semester 3
Curriculum->Master RI FAME->Semester 3

Bibliography

D.T.J. Hurle, “Handbook of Crystal Growth”, Elsevier, 1994