Number of hours
- Lectures 10.0
- Tutorials 6.0
ECTS
ECTS 2.5
Goal(s)
Knowledge of :
- The various types of single crystals used in advanced technologies
- All the industrial and laboratory crystal growth processes
- Defect generation due to the crystal growth process
TO SEE FICHE 2A-SIM 4PMMPHO9
Contact Thierry DUFFAR
Content(s)
- Bulk crystal growth techniques: Czochralski, floating zone, Verneuil, shaping, Bridgman, PVT …
- Growth kinetics : interface morphology, rough and facetted, classical kinetic laws for rough, facetted and unsaturable interfaces
- Chemical Segregation : Sheil-Gulliver, diffusive case, convecto-diffusive, radial segregation
- Crystal defects :
- Point defects and precipitation
- Dislocations in semiconductors
- Dislocation generation and multiplication during crystal growth
- Twinning
- Grain and grain boundary nucleation and growth
Prerequisites
Teaching methods : The fundamental concepts are presented in theoretical classes, problems are solved in TP classes, starting with simple examples and gradually introducing more complex examples based on real cases.
Language : Classes and assessment in English
Test
The exam is given in english only
Final Exam (2h)
Additional Information
This course is given in english only
Course list
Curriculum->Internationals Cursus->Semester 3
Curriculum->Master RI FAME->Semester 3
Bibliography
D.T.J. Hurle, “Handbook of Crystal Growth”, Elsevier, 1994