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Physics of advanced MOS devices - 5PMNPCM2

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  • Number of hours

    • Lectures : 9.0
    • Tutorials : 9.0
    • Laboratory works : 0
    • Projects : 0
    • Internship : 0
    ECTS : 1.5

Goals

The aim of this lecture is to presents the physics and the modelling of the MOSFET

Contact Quentin RAFHAY

Content

  • Demonstration of the current-voltage equation of the MOSFET
  • Carrier transport in long and short channel
  • Electrostatic effects in short channel
  • Quantum effets


Prerequisites

Solid state physics
Semiconductor Physics
Semiconductor device physics

Tests

Exam, 2h



100% exam

Additional Information

Curriculum->Double-Diploma Engineer/Master->Semester 9
Curriculum->Engineering degree->Semester 9

Bibliography

Physique des semiconducteurs et des composants électronique - Henry Mathieu - Dunod
Fundamentals of carrier transport - Mark Lundstrom - Cambridge university press
Semiconductor devices physics and technology - Sze

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Université Grenoble Alpes