5PMNTPE0 : Labs: Electrical characterization of MOS devices - WPMNDCE0

Goal(s)

Experimentally evidence the characteristics of parasitic effets present in advanced MOSFET

Content(s)

• First part of the session (4 hours):
  1. Become autonomous within the environment of the TCAD tools, (i) understand the coding for the Sentaurus Device Editor (SDE) and electrical simulation (SDEVICE), and (ii) be able to use the data visualization tools Svisual (2D, 1D sections, etc.), Inspect (I(V) curve, etc.)
  2. Process data from the simulator and extract from the I(V) curves the following electrical parameters of a MOSFET: the threshold voltage Vth and the channel mobility µ0.
  3. Link the evolution of the threshold voltage with the reduction in channel length (short channel effect) and use of the physical parameters in the 2D structure (concentration, energy band, electrostatic potential etc.) helping your interpretation.

• During the second part of the practice, you will carry out simulations yourself (4 hours):
  1. Simulate Id(Vg) curves which allow you to evaluate the effect of DIBL and observation of physics parameters in the 2D structure (concentration, energy, etc.) helping your interpretation.
  2. Simulation of Id(Vd) curves, extraction of short channel effects like the channel length modulation parameter and correlation with the DIBL effect;
  3. Simulation a MOSFET Bulk structure under the same biasing conditions as those of the structure in FDSOI technology and evaluate the Vth roll-off. Compare the two technologies using the observation of physical parameters in the 2D structure (concentration, energy, etc.).

Notions of numerical methods of finite elements
Physics of semiconductor devices
Electrical characterization of MOSFET