Aller au menu Aller au contenu
Grenoble INP
Our engineering & Master degrees


School of engineering in Physics, Applied Physics, Electronics & Materials
Science
Our engineering & Master degrees
Our engineering & Master degrees

> Studies

Advanced CMOS devices - 4PMTACD6

A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In

  • Number of hours

    • Lectures : 8.0
    • Tutorials : 8.0
    • Laboratory works : 0
    • Projects : 0
    • Internship : 0
    ECTS : 1.5

Goals

The aim of this lecture is to presents the physics and the modelling of the MOSFET

Contact Quentin RAFHAY

Content

  • Demonstration of the current-voltage equation of the MOSFET
  • Carrier transport in long and short channel
  • Electrostatic effects in short channel
  • Quantum effets


Prerequisites

Solid state physics
Semiconductor Physics
Semiconductor device physics

Tests

Semester 8 - The exam is given in english only 

Exam, 2h



Additional Information

Semester 8 - This course is given in english only EN

Curriculum->NANOTECH->Semester 8

Bibliography

Physique des semiconducteurs et des composants électronique - Henry Mathieu - Dunod
Fundamentals of carrier transport - Mark Lundstrom - Cambridge university press
Semiconductor devices physics and technology - Sze

A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail cet article Facebook Twitter Linked In

Date of update December 8, 2015

Université Grenoble Alpes