Number of hours
- Lectures 6.0
- Projects 0
- Tutorials 6.0
- Internship 0
- Laboratory works 0
ECTS
ECTS 1.0
Goal(s)
In the microelectronics reliability context, understand the physics and the laws ruling the main failure mechanisms encountered in integrated circuit reliability, be able to perform a reliability analysis up to lifetime extrapolation based on experimental data
Contact Emmanuel VINCENTContent(s)
- Reliability context in semiconductor industry
- Reliability basics remindser : reliability analysis basic concepts and tools for microelectronics reliability
- Focus on main failure mechanisms in modern integrated circuits : phenomenological description and associated physics, methodologies and test structures, process reliability strategy
- Addressed failure mechanisms : Gate Oxide Integrity, Mobile Ion Contamination, Hot-Carrier Injection, Bias Temperature Instability, Electromigration, Stress Migration
- Application exercises
Prerequisites
- Semiconductor physics
- Statistics
Test
EVALUATION : Written exam 2h
100% écrit
Additional Information
Course list
Curriculum->IPhy->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9