Device and circuit reliability - 5PMNFCC0
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Number of hours
- Lectures : 6.0
- Tutorials : 6.0
- Laboratory works : 0
- Projects : 0
- Internship : 0
ECTS : 1.0
Goals
In the microelectronics reliability context, understand the physics and the laws ruling the main failure mechanisms encountered in integrated circuit reliability, be able to perform a reliability analysis up to lifetime extrapolation based on experimental data
Contact Emmanuel VINCENT
Content - Reliability context in semiconductor industry
- Reliability basics remindser : reliability analysis basic concepts and tools for microelectronics reliability
- Focus on main failure mechanisms in modern integrated circuits : phenomenological description and associated physics, methodologies and test structures, process reliability strategy
- Addressed failure mechanisms : Gate Oxide Integrity, Mobile Ion Contamination, Hot-Carrier Injection, Bias Temperature Instability, Electromigration, Stress Migration
- Application exercises
Prerequisites- Semiconductor physics
- Statistics
Tests EVALUATION : Written exam 2h
Additional Information Curriculum->Double-Diploma IPhy-PhSem->Semester 9
Curriculum->IPhy->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9
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