Dispos CMOS avancés (avec TP simu) - 4PUTCMO1

Goal(s)

The aim of this lecture is to present the physics of advanced CMOS devices together with process integration elements and some state-of-art architectures (in particular the double gate MOSFET on silicon-on-insulator).

Content(s)

Subthreshold current of a MOSFET
Electrostatic effects in short channel
Silicon-on insulator devices
Double gate transistors
Advanced architectures (SOI, FinFET)

Solid state physics
Semiconductor Physics
Semiconductor device physics
Microelectronics technology

Test

In-class SESSION1:
Type of assessment: Supervised written exam + continuous assessment (homework) 10%
For the supervised written exam : Duration: 2 hours. All documents are forbidden. Only a formula document will be distributed with the subject for the exam.
Calculator: allowed

In-class SESSION2:
Same modalities as in session 1 for supervised written exam part. The continuous assessment remains the same as in session 1

Additional Information

Bibliography

Physique des semiconducteurs et des composants électronique - Henry Mathieu - Dunod
Fundamentals of carrier transport - Mark Lundstrom - Cambridge university press
Semiconductor devices physics and technology - Sze