Number of hours
- Lectures 0
- Projects 0
- Tutorials 0
- Internship 0
- Laboratory works 8.0
- Written tests 0
ECTS
ECTS 0.5
Goal(s)
Experimentally evidence the characteristics of parasitic effects present in submicronic/nanometric MOSFET
Contact Maryline BAWEDINContent(s)
- Introduction to TCAD numerical simulations of state of the art MOSFETs
- Characteristics of short channel effects using I-V measurement
- Extraction of typical physics parameters (threshold voltage, mobility etc)
- Settle of links between the 2D/3D simulations and electrical IV behavior
Prerequisites
Electrical characterisation of MOSFET
Test
The students can chose: Conventional lab report or oral evaluation at the end of the practice
100% rapport
Additional Information
Course list
Curriculum->IPhy->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9