Number of hours
- Lectures 20.0
- Projects 0
- Tutorials 14.0
- Internship 0
- Laboratory works 28.0
ECTS
ECTS 2.5
Goal(s)
This cours is an introduction to RF interfaces intégration in silicon BiCMOS technologies.
Contact Sylvain BOURDELContent(s)
- Introduction to RF interfaces behavior and constraints
- Non-linearity (IIP3) and noise factor (NF)
- Integrated devices for RF applications
- actives devices (MOS and Bipolar)
- passives components (inductors, capacitors and resistors)
- Application to critical RF cells - Low noise amplifier (LNA
- Mixer
- Voltage controlled oscillator (VCO).
- Power amplifier
- RF architecture
- Heterodyne, Low-IF, Zero-IF
- Image rejection and polyphase filters
Prerequisites
- Good knowledge of analog circuits behavior
- Digital Communications
Test
Written Examenination
Practical Training Repport
N1=75%EXAMEN1+25%TP
N2=75%EXAMEN2+25%TP
Additional Information
Course list
Curriculum->Alternance MT->Semester 7
Bibliography
- Benzad RAZAVI : « RF Microelectronics », Prentice Hall (1998) , ISBN : 0-13-887571-5
- Thomas H. LEE : « The design of CMOS Radio-Frequency Integrated Circuits» Cambridge University Press,