Number of hours
- Lectures 8.0
- Projects 0
- Tutorials 0
- Internship 0
- Laboratory works 12.0
ECTS
ECTS 2.0
Goal(s)
The lecture will introduce the main technological steps and their key parameters, in order to prepare the students for the clean-room labwork. The labwork flow and steps will be benchmarked with respect to actual solutions used in the microelectronics industry.
The aim the clean room labworks is to familiarize students with the technological operations for the elaboration of integrated circuits (NMOS process).
Electrical characterization sessions will follow the realization in order to test the electrical behavior of the fabricated devices.
Content(s)
Lecture: principles, mechanisms, key parameters for the main fabrication steps: oxidation, deposition, ionic implantation, lithography, etching etc.
Technology lab sessions: Thermal processes; deposition processes (CVD, sputtering, heat vapor deposition...); doping (ion implantation, diffusion); lithography ; wet and reactive ion etching.
Electrical characterization sessions: C/V and I/V measurements, MOS capacitance behavior, PN junctions, integrated resistors, MOS transistors.
Prerequisites
Basics of semiconductor device physics.
Test
For the lecture part:
- if the evaluation is done "in presence": homework assignment (20% of the grade CM, cannot be repassed in session 2) + 30 minutes exam de 30 minutes (Chamilo, in an informatics room) without documents or calculators (80% of the CM grade)
- if the evaluation is done "at distance": assignement (25%) + teamwork (25%) + on-line test (50%)
For the practicals if the evaluation is done "in presence" or "at distance":
A report for the clean room sessions as well as a report for the electrical characterization sessions, to be held one week after the last session of each part.
The behavior during the sessions will be taken into account.
Note finale = 0.5(2/3*SB+1/3*CE)+0.5 *note CM
Pour la session 2, il y a que la note d’examen CM (80% du CM) qui est rattrapable.
Bibliography
Handouts