Number of hours
- Lectures 15.0
- Projects 0
- Tutorials 19.0
- Internship 0
- Laboratory works 0
ECTS
ECTS 2.0
Goal(s)
To understand the physical phenomena which appear in semiconductor materials and are used in microelectronic devices or sensors.
Contact Nathalie MATHIEUContent(s)
• Semiconductor elementary properties at equilibrium (crystal lattices, energy bands, electrons and holes, doping)
• Weak perturbations of equilibrium : charge transport (conduction, carrier mobility, diffusion)
• Poisson equation and consequences (space charge region, potential barrier or well)
• PN junction
• Strong perturbations of equilibrium (carrier generation and recombination)
• Metal-semiconductor contact
Prerequisites
- Differential equations
- Basics in physics
Session 1 : Written final exam (2h)
Grade Session 1 = 100% Exam
Session 2 : Written final exam (1h30)
Grade Session 2 = Exam Session 2 (100%)
Session 1 if confinement : Continuous Assessment + final exam (MCQ + 1h written exam)
Grade Session 1 = 20% CA + 80% Exam
Session 2 if confinement : Written exam 1h (ZOOM and camera requestes) + oral examination (ZOOM 10mn)
Grade Session 2 = Oral examination
Contrôle continu : CC
Examen écrit Session1 : DS1
Examen écrit Session 2 : DS2
1 et 2 après type = session
N1 = Note finale session 1
N2 = Note finale session 2
En présentiel :
N1 = 100% DS1
N2 = 100% DS2
H. MATHIEU, Physique des semiconducteurs et des composants électroniques (Dunod, 2004)
G. STREETMAN and S. BANERJEE, Solid-State Electronic Devices (Prentice Hall, 2005)