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School of engineering in Physics, Applied Physics, Electronics & Materials
Science
> Studies
Objectives
•To understand the physical models describing the operation of the most common devices used in today's microelectronics industry
•To learn some specific effects related to device size reduction.
•Metal-Insulator-Semiconductor (MIS) structures; Metal-Oxide-Semiconductor (MOS) capacitor, Charge-Coupled-Devices (CCD)
•Field-effect transistors (FETs) and Metal-Oxide-Semiconductor FETS (MOSFETs): behaviour, modelling, parameter extraction and measurements
•Basic notions about junction field effect transistors (JFETs) and Metal-Semiconductor FETs (MESFETs)
•P-N junction, ideal and practical devices
•P-N junction applications: Zener diode, IMPATT diode, PIN diode, photodiode and solar cells.
basic notions in electricity and semiconductor physics.
Level : bases of semiconductor device physics.
2h written exam
A. Vapaille et R. Castagne : Dispositifs et circuits intégrés (Dunod, 1987).
H. Mathieu : Physique des semiconducteurs et des composants électroniques (Masson, 1996)
S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).
Date of update March 13, 2019
3 Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1
