Number of hours
- Lectures 20.0
- Projects 0
- Tutorials 0
- Internship 0
- Laboratory works 4.0
ECTS
ECTS 1.5
Goal(s)
Objectives
•To understand the physical models describing the operation of the most common devices used in today's microelectronics industry
•To learn some specific effects related to device size reduction.
Content(s)
•Metal-Insulator-Semiconductor (MIS) structures; Metal-Oxide-Semiconductor (MOS) capacitor, Charge-Coupled-Devices (CCD)
•Field-effect transistors (FETs) and Metal-Oxide-Semiconductor FETS (MOSFETs): behaviour, modelling, parameter extraction and measurements
•Basic notions about junction field effect transistors (JFETs) and Metal-Semiconductor FETs (MESFETs)
•P-N junction, ideal and practical devices
•P-N junction applications: Zener diode, IMPATT diode, PIN diode, photodiode and solar cells.
Prerequisites
basic notions in electricity and semiconductor physics.
Level : bases of semiconductor device physics.
Test
2h written exam
Bibliography
A. Vapaille et R. Castagne : Dispositifs et circuits intégrés (Dunod, 1987).
H. Mathieu : Physique des semiconducteurs et des composants électroniques (Masson, 1996)
S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).