Phelma Formation 2022

Microelectronic device physics - 4PMEM1E9

  • Number of hours

    • Lectures 20.0
    • Projects 0
    • Tutorials 0
    • Internship 0
    • Laboratory works 4.0


    ECTS 1.5


•To understand the physical models describing the operation of the most common devices used in today's microelectronics industry
•To learn some specific effects related to device size reduction.

Contact Thierry OUISSE


•Metal-Insulator-Semiconductor (MIS) structures; Metal-Oxide-Semiconductor (MOS) capacitor, Charge-Coupled-Devices (CCD)
•Field-effect transistors (FETs) and Metal-Oxide-Semiconductor FETS (MOSFETs): behaviour, modelling, parameter extraction and measurements
•Basic notions about junction field effect transistors (JFETs) and Metal-Semiconductor FETs (MESFETs)
•P-N junction, ideal and practical devices
•P-N junction applications: Zener diode, IMPATT diode, PIN diode, photodiode and solar cells.


basic notions in electricity and semiconductor physics.
Level : bases of semiconductor device physics.


2h written exam

Additional Information

Course list
Curriculum->Engineering degree->Semester 7


A. Vapaille et R. Castagne : Dispositifs et circuits intégrés (Dunod, 1987).
H. Mathieu : Physique des semiconducteurs et des composants électroniques (Masson, 1996)
S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).