Microelectronic device physics - 4PMEM1E9
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Number of hours
- Lectures : 20.0
- Tutorials : 0
- Laboratory works : 0
- Projects : 0
- Internship : 0
ECTS : 1.5
Goals
Objectives
•To understand the physical models describing the operation of the most common devices used in today's microelectronics industry
•To learn some specific effects related to device size reduction.
Contact Thierry OUISSE
Content •Metal-Insulator-Semiconductor (MIS) structures; Metal-Oxide-Semiconductor (MOS) capacitor, Charge-Coupled-Devices (CCD)
•Field-effect transistors (FETs) and Metal-Oxide-Semiconductor FETS (MOSFETs): behaviour, modelling, parameter extraction and measurements
•Basic notions about junction field effect transistors (JFETs) and Metal-Semiconductor FETs (MESFETs)
•P-N junction, ideal and practical devices
•P-N junction applications: Zener diode, IMPATT diode, PIN diode, photodiode and solar cells.
Prerequisitesbasic notions in electricity and semiconductor physics.
Level : bases of semiconductor device physics.
Additional Information Curriculum->Engineering degree->Semester 7
Bibliography A. Vapaille et R. Castagne : Dispositifs et circuits intégrés (Dunod, 1987).
H. Mathieu : Physique des semiconducteurs et des composants électroniques (Masson, 1996)
S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).
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Date of update March 13, 2019