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Our engineering & Master degrees
Our engineering & Master degrees

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Microelectronic device physics - 4PMEM1E9

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  • Number of hours

    • Lectures : 20.0
    • Tutorials : 0
    • Laboratory works : 0
    • Projects : 0
    • Internship : 0
    ECTS : 1.5

Goals

Objectives
•To understand the physical models describing the operation of the most common devices used in today's microelectronics industry
•To learn some specifc effects related to device size reduction.

Contact Thierry OUISSE

Content

•Metal-Insulator-Semiconductor (MIS) structures; Metal-Oxide-Semiconductor (MOS) capacitor, Charge-Coupled-Devices (CCD)
•Field-effect transistors (FETs) and Metal-Oxide-Semiconductor FETS (MOSFETs): behaviour, modelling, parameter extraction and measurements
•Basic notions about junction field effect transistors (JFETs) and Metal-Semiconductor FETs (MESFETs)
•P-N junction, ideal and practical devices
•P-N junction applications: Zener diode, IMPATT diode, PIN diode, photodiode and solar cells.



Prerequisites

basic notions in electricity and semiconductor physics.
Level : bases of semiconductor device physics.

Tests

2h written exam



Additional Information

Curriculum->Engineering degree->Semester 7

Bibliography

A. Vapaille et R. Castagne : Dispositifs et circuits intégrés (Dunod, 1987).
H. Mathieu : Physique des semiconducteurs et des composants électroniques (Masson, 1996)
S.M. Sze : Semiconductor devices: Physics and Technology (2nd Ed., J. Wiley, 2002).

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Date of update March 13, 2019

Université Grenoble Alpes