Modélisation, réalisation et caractérisation des composants actifs intégrés - 3PMRMRCC

Goal(s)

Part I: Device modelling (28h CTD + 4h tutorat):
Part II: Fabrication and characterization (8h CTD + 16h TP salle blanche + 8h TP caractérisation électrique)

This course aims to familiarize students with technological operations as well as the physical modeling of the various physical phenomena occurring during the development of integrated circuits (NMOS sector), in connection with the clean room and electrical characterization labs.

Content(s)

Part I: Device modelling (28h CTD + 4h tutorat):
Part II: Fabrication and characterization (8h CTD + 16h TP salle blanche + 8h TP caractérisation électrique)

Introduction of CMOS integration and clean room; thermal treatments; deposits (CVD, sputtering, evaporation, etc.); doping (ion implantation, diffusion); lithography; etching; process integration.
Practical work in clean room
Electrical characterization of different active components (MOS capacitors, transistors, diodes, etc.)

semiconductor physics