Number of hours
- Lectures 9.0
- Projects 0
- Tutorials 9.0
- Internship 0
- Laboratory works 0
ECTS
ECTS 1.5
Goal(s)
This lecture aims at understanding the physics of defects in semiconductor electron devices, at the heart of devices performance loss and degradations. The defects appear in numeros technologies, like CMOS, imagers, detectors etc.
Contact Quentin RAFHAYContent(s)
- Recalls on basic devices
- Recalls on defects in semiconductors
- Harmonic characterization
- Impulse characterization
- Low frequency noise
Prerequisites
Semiconductor device physics
Test
100% on exam (2h)
Examen écrit Session 1 : DS1
Examen écrit Session 2 : DS2
N1 = Note finale session 1 = 100% DS1
N2 = Note finale session 2 = 100% DS2
Additional Information
Course list
Curriculum->IPhy->Semester 9
Curriculum->Double-Diploma Engineer/Master->Semester 9
Bibliography
SEMICONDUCTOR MATERIAL AND DEVICE CHARACTERIZATION
Dieter K Schroder