Number of hours
- Lectures 16.0
- Projects 0
- Tutorials 12.0
- Internship 0
- Laboratory works 0
ECTS
ECTS 3.0
Goal(s)
Main goal of this course is:
- To introduce the physical phenomena which appear in semiconductor materials and that are used in microelectronic sensors or devices.
- To understand the physics and operation of basic semiconductor devices: PN junctions, metal-oxide semiconductor (MOS) capacitors, MOS transistors.
Content(s)
Reminders on the elementary properties of semiconductors and transport phenomena
Generation phenomena – recombinations
Semiconductor-based devices (pn junction, MOS capacitor, MOS transistor).
Prerequisites
Solid-State Physics and semiconductor physics (electronic properties, energy bands, charge carriers)
Semester 7 - The exam is given in english only
In-class SESSION1:
Type of assessment : Supervised homework + continuous assessment
Duration: 2 hours
Modalities : All documents are forbidden. Only a form will be distributed with the subject.
Calculator: allowed
session 1 condition normale : 90% Examen Final + 10% CC
session 2 condition normale :
session 1 condition confinement :
session 2 condition confinement :
Semester 7 - This course is given in english only
En Anglais:
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S.M. SZE: Semiconductor devices : physics and technology international student version
(3rd Edition, Wiley, 2013) ISBN : 978-0-470-87367-0
Disponible BU Joseph-Fourier, Techniques rdc Sud 621.382 SZE
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S.M. SZE: Physics of semiconductor devices
(3rd Edition, 2007), ISBN : 0-471-14323-5
BU Joseph-Fourier, Recherche étage Sud 537.311.322 SZE
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G. Streetman and S. Banerjee : Solid-state Electronic Devices
(6th Ed., Prentice Hall,2005) ISBN : 0-13-025538-6
En Français:
A. Vapaille et R. Castagné : Dispositifs et circuits intégrés
(Dunod, 1987) ISBN : 2-04-019714-1
Phelma - bibliothèque Salle lecture D00-VAP
H. Mathieu : Physique des semiconducteurs et des composants électroniques
(5eme édition, Dunod, 2004) ISBN : 2-10-048633-0
BU Joseph-Fourier, Techniques rdc Sud 621.38 MAT