Physics of technological processes - WPMSPPT7

Goal(s)

The objective of the course is to modelize the physical phenomena which intervene in the current electronic device technology. This include microelectronics, but also photovoltaic cells and LED for solid state light sources. Main processes include solid state diffusion, ion implantation, defects formation and recovery, interdiffusion for thin film formation (SiO2, silicides, carbides…). The phenomena are illustrated in the case of silicon, mainly, and of “alternative” semiconductors (SiC, GaN, diamond,…).

Content(s)

• Introduction: Principal technological steps of the current circuits. Evolutions.
• Atomic diffusion in the semiconductors : historical review, self-diffusion, dopant diffusion.
• Ion Implantation : historical review, LSS model, application to doping and SmartCut, Shallow jonctions, annealing, TED.
• Formation of layers by chemical reaction. Application to thermal oxidation of silicon.

A full course handout in English is available.
The exam subject is available in English, and student can write answers in English.

Crystallography : Crystal structure
Thermodynamics : Free energy, Gibbs energy
Semi-conductor Physics : Band diagram, doping, energy levels