Lab C1: Electrical characterization of MOS capacitors and diode Electrical characterization of MOS capacitors and diode
Using C-V measurement on MOS capacitor, the following extraction will be done * doping of the substrate * flat band voltage * trapped charge density Using the I-V measurement on pn diodes, the following extraction will be done * Threshold of the diode * Ideality
Lab C2: Electrical characterization of NMOS transistors
Using the I-V measurement on nMOS , the following extraction will be done * Threshold of the transistor * Low field mobility * Effective length
Lab C3: Electrical characterization of submicron transistors
Using the I-V measurement on nMOS , the following extraction will be done * Roll off * DIBL * Corrected low field mobility * Effective length * Access resistances
Lab C4: Characterization of MEMS
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