The goal of this course is to give a general view on the fabrication processes that exist in microelectronics. Focus is made on integrated silicon applications. Various standard technologies will be presented in CMOS bulk, BiCMOS, FD SOI, interposers. Special attention will be paid on RF and millimeter waves constraints. Weighing between the pros and cons will enable to enface a specific technology for a specific application, digital and/or analog, RF and/or millimeter waves. An overview of potentially future trends will be drawn also with alternative technologies: MEMS vs varactors for tunability, graphene for very high mobility channels. An 8-hour tutorial in the very nice cleanroom of the CIME-Nanotech will illustrate this class.
Contact Florence PODEVINFabrication process in clean-room. From sand to silicon wafer. Cleaning techniques. Material deposition: epitaxy, sputtering, chemical vapor deposition. Material transformation: wet and dry oxidation. Doping: diffusion, ionic implantation. Lithography. Chemical etching, physical etching, chemical mechanical polishing. Standard technologies front-end and back-end, CMOS for digitals and low-frequencies, FD SOI for low consumption, BiCMOS for high frequencies and millimeter waves analogs, silicon interposers for taking advantage of various technologies. Specific constraints for RF and millimeter waves consideration: dummies, coupling, back-end thickness. Alternative technologies: MEMS vs varactors. Alternative technologies: graphene and high mobility channels
Semi-conductor basics
Semestre 9 - L'examen existe uniquement en anglais 
Written exam
WE= WRITTEN EXAM
Final mark =100% WE
Semestre 9 - Le cours est donné uniquement en anglais
mise à jour le 28 juillet 2023
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