Volumes horaires
- CM 0
- Projet 0
- TD 0
- Stage 0
- TP 0
- DS 0
Crédits ECTS
Crédits ECTS 1.0
Objectif(s)
Fabrication process in clean-room. From sand to silicon wafer. Cleaning techniques. Material deposition: epitaxy, sputtering, chemical vapor deposition. Material transformation: wet and dry oxidation. Doping: diffusion, ionic implantation. Lithography. Chemical etching, physical etching, chemical mechanical polishing. Standard technologies front-end and back-end, CMOS for digitals and low-frequencies, FD SOI for low consumption, BiCMOS for high frequencies and millimeter waves analogs, silicon interposers for taking advantage of various technologies. Specific constraints for RF and millimeter waves consideration: dummies, coupling, back-end thickness. Alternative technologies: MEMS vs varactors. Alternative technologies: graphene and high mobility channels
Contact Florence PODEVINContenu(s)
Trainings in a cleanroom environment will be practiced with 8 hours dedicated to the clean-room presentation and the fabrication of diodes or MOM capacitors.
Prérequis
Basics in semi conductor
Contrôle des connaissances
Semestre 9 - L'examen existe uniquement en anglais 
Lab report
Final mark= 100% lab report
Informations complémentaires
Semestre 9 - Le cours est donné uniquement en anglais
Cursus ingénieur->Double-Diplômes Ingénieur/Master->Semestre 9
Bibliographie
- R. Levy, “Microelectronic Materials and Processes.
- C. Grovenor, “Microelectronic materials”.
- G. Rebeiz, “RF MEMS, theory, Design , and Technologies, Wiley.
- Mohamed Gad-el-Hak, “MEMS Introduction and Fundamentals”, The MEMS Handbook 2nd Ed.
- J. Ramsden, “Nanotechnology, an introduction”, Elsevier.