Clean room based fabrication (UGA) - WPMWCRB7
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Objectifs
Fabrication process in clean-room. From sand to silicon wafer. Cleaning techniques. Material deposition: epitaxy, sputtering, chemical vapor deposition. Material transformation: wet and dry oxidation. Doping: diffusion, ionic implantation. Lithography. Chemical etching, physical etching, chemical mechanical polishing. Standard technologies front-end and back-end, CMOS for digitals and low-frequencies, FD SOI for low consumption, BiCMOS for high frequencies and millimeter waves analogs, silicon interposers for taking advantage of various technologies. Specific constraints for RF and millimeter waves consideration: dummies, coupling, back-end thickness. Alternative technologies: MEMS vs varactors. Alternative technologies: graphene and high mobility channels
Contact Yannis LE GUENNEC
Contenu Trainings in a cleanroom environment will be practiced with 8 hours dedicated to the clean-room presentation and the fabrication of diodes or MOM capacitors.
PrérequisBasics in semi conductor
Contrôles des connaissances Semestre 9 - L'examen existe uniquement en anglais 
Lab report
Final mark= 100% lab report
Informations complémentaires Semestre 9 - Le cours est donné uniquement en anglais 
Cursus ingénieur->Double-Diplômes Ingénieur/Master->Semestre 9
Cursus ingénieur->Masters->Semestre 9
Cursus ingénieur->Master EEA WICS->Semestre 9
Bibliographie - R. Levy, “Microelectronic Materials and Processes.
- C. Grovenor, “Microelectronic materials”.
- G. Rebeiz, “RF MEMS, theory, Design , and Technologies, Wiley.
- Mohamed Gad-el-Hak, “MEMS Introduction and Fundamentals”, The MEMS Handbook 2nd Ed.
- J. Ramsden, “Nanotechnology, an introduction”, Elsevier.
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mise à jour le 20 juillet 2016