Clean room based fabrication (UGA) - WPMWCRB7

Objectifs

Fabrication process in clean-room. From sand to silicon wafer. Cleaning techniques. Material deposition: epitaxy, sputtering, chemical vapor deposition. Material transformation: wet and dry oxidation. Doping: diffusion, ionic implantation. Lithography. Chemical etching, physical etching, chemical mechanical polishing. Standard technologies front-end and back-end, CMOS for digitals and low-frequencies, FD SOI for low consumption, BiCMOS for high frequencies and millimeter waves analogs, silicon interposers for taking advantage of various technologies. Specific constraints for RF and millimeter waves consideration: dummies, coupling, back-end thickness. Alternative technologies: MEMS vs varactors. Alternative technologies: graphene and high mobility channels